Tunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films

Abstract

The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electronic transport phenomenon that induces frequency doubling and occurs in non-centrosymmetric crystals with large Berry curvature -- an emergent magnetic field encoding the geometric properties of electronic wavefunctions. The design of (opto)electronic devices based on the NLHE is however hindered by the fact that this nonlinear effect typically appears at low temperatures and in complex compounds characterized by Dirac or Weyl electrons. Here, we show a strong room temperature NLHE in the centrosymmetric elemental material bismuth synthesized in the form of technologically relevant polycrystalline thin films. The ($111$) surface electrons of this material are equipped with a Berry curvature triple that activates side jumps and skew scatterings generating nonlinear transverse currents. We also report a boost of the zero field nonlinear transverse voltage in arc-shaped bismuth stripes due to an extrinsic geometric classical counterpart of the NLHE. This electrical frequency doubling in curved geometries is then extended to optical second harmonic generation in the terahertz (THz) spectral range. The strong nonlinear electrodynamical responses of the surface states are further demonstrated by a concomitant highly efficient THz third harmonic generation which we achieve in a broad range of frequencies in Bi and Bi-based heterostructures. Combined with the possibility of growth on CMOS-compatible and mechanically flexible substrates, these results highlight the potential of Bi thin films for THz (opto)electronic applications.

arXiv comment44 pages, 21 figures

References in corpus (33)

• Topological Insulators with Inversion Symmetry
• Novel Symmetry Classes in Mesoscopic Normal-Superconducting Hybrid Structures
• Quantum nonlinear Hall effect induced by Berry curvature dipole in time-reversal invariant materials
• Higher-Order Topology in Bismuth
• Hexagonal Warping Effects in the Surface States of Topological Insulator Bi${}_2$Te${}_3$
• Observation of the nonlinear Hall effect under time reversal symmetric conditions
• Topological States on the Gold Surface
• Nonlinear Hall Effects
• Room temperature nonlinear Hall effect and wireless RF rectification in Weyl semimetal TaIrTe4
• Band signatures for strong nonlinear Hall effect in bilayer WTe${}_2$
• High-frequency rectification via chiral Bloch electrons
• Strain-engineering of Berry curvature dipole and valley magnetization in monolayer MoS${}_2$
• Berry curvature dipole current in transition metal dichalcogenides family
• Strong nonlinear terahertz response induced by Dirac surface states in Bi2Se3 Topological Insulator
• Electrically tuneable nonlinear anomalous Hall effect in two-dimensional transition-metal dichalcogenides WTe2 and MoTe2
• Quantum frequency doubling in the topological insulator Bi2Se3
• Zero-magnetic-field Hall effects in artificially corrugated bilayer graphene
• Terahertz detection based on nonlinear Hall effect without magnetic field
• Theory of nonlinear Hall effects: renewed semiclassics from quantum kinetics
• Berry Curvature Dipole in Strained Graphene: a Fermi Surface Warping Effect
• Giant $c$-axis nonlinear anomalous Hall effect in T${}_d$-MoTe${}_2$ and WTe${}_2$
• Nonlinear Hall effect with time-reversal symmetry: Theory and material realizations
• Electrical tunability of terahertz nonlinearity in graphene
• Engineering Weyl phases and nonlinear Hall effects in T${}_d$-MoTe${}_2$
• Electronic materials with nanoscale curved geometries
• Strong Room-Temperature Bulk Nonlinear Hall Effect in a Spin-Valley Locked Dirac Material
• Designing spin and orbital sources of Berry curvature at oxide interfaces
• Milliwatt terahertz harmonic generation from topological insulator metamaterials
• Anomalous Planar Hall Effect in Two-Dimensional Trigonal Crystals
• Emptying Dirac valleys in bismuth using high magnetic fields
• Terahertz signatures of ultrafast Dirac fermion relaxation at the surface of topological insulators at room temperature
• A nonlinear, geometric Hall effect without magnetic field
• Surface induced electronic Berry curvature in Berry curvature free bulk materials

Cited by in corpus (16)

• Non-linear Transport in Non-centrosymmetric Systems: From Fundamentals to Applications
• The quantum metric of electrons with spin-momentum locking
• Nonlinear Hall effect and scaling law in Sb-doped topological insulator MnBi4Te7
• Surface-Dominated Quantum Metric-Induced Nonlinear Transport in the Layered Antiferromagnet CrSBr
• Proper Definition of Intrinsic Nonlinear Current
• Observation of Temperature Independent Anomalous Hall Effect in Thin Bismuth from Near Absolute Zero to 300 K Temperature
• Engineering nonlinear Hall effect in bilayer graphene/black phosphorus heterostructures
• Nonlinear planar magnetotransport as a probe of the topology of surface states
• Room temperature quantum metric effect in TbMn6Sn6
• Hallmarks of spin textures for high-harmonic generation in two-dimensional materials
• Band Geometry Induced Third-Harmonic Generation
• Identifying geometric third-order nonlinear transport in disordered materials
• Ferroelectric-tunable quantum nonlinearity of chiral Bloch electrons in a moiré system
• Prediction of a layer nonlinear Hall effect in bilayer nonmagnetic or antiferromagnetic systems
• Nonlinear hydrodynamic response of a quantum Hall system
• Modern triad for magnetic material science: geometric shape, electronic bands and spin textures