54 citations · 126 across the 11 of their papers we have counts for
11 papers
Direct Wafer Bonding of Crystal-Ion-Sliced GaP Thin Films for Photonic Applications
Hossein Esfandiar, Emanuel Glück, Fabian Ganss +11
Gallium phosphide (GaP) is a promising material platform for integrated photonics because of its high refractive index, broad optical transparency, and strong second-order nonlinea…
Quantum metric quadrupoles in elemental bismuth thin films
Rhonald Burgos Atencia, Pavlo Makushko, Gabriele Naselli +11
The nonlinear transport properties of solids are deeply rooted in the quantum geometry of their electronic wavefunctions, which is encoded in the quantum geometric tensor. Its real…
Sub-nanosecond structural dynamics of the martensitic transformation in Ni-Mn-Ga
Yuru Ge, Fabian Ganss, Daniel Schmidt +9
Martensitic transformations drive a multitude of emerging applications, which range from high stroke actuation and, mechanocaloric refrigeration, to thermoelastic energy harvesting…
Structural and Optical Properties of Crystal Ion Sliced BaTiO Thin Films
Hossein Esfandiar, Fatemeh Abtahi, Trevor G. Vrckovnik +10
Barium titanate (BaTiO) is a compelling material for integrated photonics due to its strong electro-optic and second-order nonlinear properties. Crystal Ion Slicing (CIS) prese…
Defect analysis of the - to -GaO phase transition
Umutcan Bektas, Maciej O. Liedke, Huan Liu +7
In this study, we investigate the ion-irradiation-induced phase transition in gallium oxide (Ga2O3) from the to the phase, the role of defects during the transformation, an…
Formation of martensitic microstructure in epitaxial Ni-Mn-Ga films after fast cooling
Yuru Ge, Fabian Ganss, Klara Lünser +5
Shape memory alloys have a wide range of applications, including high stroke actuation, energy-efficient ferroic cooling, and energy harvesting. These applications are based on a r…
Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing
Oliver Steuer, Daniel Schwarz, Michael Oehme +10
Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability…
Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
Oliver Steuer, Michail Michailow, René Hübner +12
For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this allo…
Tunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films
Pavlo Makushko, Sergey Kovalev, Yevhen Zabila +13
The nonlinear Hall effect (NLHE) with time-reversal symmetry constitutes the appearance of a transverse voltage quadratic in the applied electric field. It is a second-order electr…
Ferromagnetic interlayer coupling in CrSBr crystals irradiated by ions
Fangchao Long, Mahdi Ghorbani-Asl, Kseniia Mosina +11
Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly the air-stable van der Waals compound CrSBr is attracting considerable int…
Topological Hall effect in single thick SrRuO3 layers induced by defect engineering
Changan Wang, Ching-Hao Chang, Andreas Herklotz +11
The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmet…