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F. Ganss

11 papers hereh-index 6221 citations37 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author11

Across the 11 of 11 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci8
  • cond-mat.mes-hall2
  • physics.optics1
same name
  • F. Ganss — 2 papers, h 3
  • F. Ganss — 1 paper, h 5
  • F. Ganss — 1 paper, h 7

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20202026
most citedTunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films

54 citations · 126 across the 11 of their papers we have counts for

collaborators
Showing 2024Show all

3 papers · 1 filter

cond-mat.mtrl-sci2024

Formation of martensitic microstructure in epitaxial Ni-Mn-Ga films after fast cooling

Yuru Ge, Fabian Ganss, Klara Lünser +5

Shape memory alloys have a wide range of applications, including high stroke actuation, energy-efficient ferroic cooling, and energy harvesting. These applications are based on a r…

cond-mat.mtrl-sci2024

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Oliver Steuer, Daniel Schwarz, Michael Oehme +10

Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability…

cond-mat.mtrl-sci2024

Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Oliver Steuer, Michail Michailow, René Hübner +12

For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this allo…

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