Topological Hall effect in single thick SrRuO3 layers induced by defect engineering

Abstract

The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultra-thin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study THE is observed in 60 nm thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 K to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated to the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronics devices.

18 pages, including the suppl. material, to be published at Advanced Electronic Materials

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Cited by in corpus (5)

• Origin of the hump anomalies in the Hall resistance loops of ultrathin SrRuO${}_3$/SrIrO${}_3$ multilayers
• Angular dependence of Hall effect and magnetoresistance in SrRuO${}_3$-SrIrO${}_3$ heterostructures
• Tuning Structural, Transport and Magnetic Properties of Epitaxial SrRuO3 through Ba-Substitution
• Bounds and anomalies of inhomogeneous anomalous Hall effects
• Topological fine structure of smectic grain boundaries and tetratic disclination lines within three-dimensional smectic liquid crystals