activity
20162025
most citedTopological Hall effect in single thick SrRuO3 layers induced by defect engineering

35 citations · 73 across the 4 of their papers we have counts for

collaborators

12 papers

physics.app-ph2021

Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current

Wenda Yang, Guo Tian, Hua Fan +13

The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of pro…

cond-mat.mtrl-sci2020

Electric-field-driven Non-volatile Multi-state Switching of Individual Skyrmions in a Multiferroic Heterostructure

Yadong Wang, Lei Wang, Jing Xia +15

Electrical manipulation of skyrmions attracts considerable attention for its rich physics and promising applications. To date, such a manipulation is realized mainly via spin-polar…

physics.app-ph20204 cited

Enhanced Stability of Antiferromagnetic Skyrmion during Its Motion by Anisotropic Dzyaloshinskii Moriya Interaction

Zongpeng Huang, Zhejunyu Jin, Xiaomiao Zhang +7

Searching for new methods to enhance the stability of antiferromagnetic (AFM) skyrmion during its motion is an important issue for AFM spintronic devices. Herein, the spin polarize…

cond-mat.mtrl-sci2020

Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects

Wenda Yang, Guo Tian, Yang Zhang +14

Ferroelectric topological objects (e.g. vortices, skyrmions) provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future config…

cond-mat.mtrl-sci202035 cited

Topological Hall effect in single thick SrRuO3 layers induced by defect engineering

Changan Wang, Ching-Hao Chang, Andreas Herklotz +11

The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmet…

physics.app-ph2019

Ultralow-loss domain wall motion driven by magnetocrystalline anisotropy gradient in antiferromagnetic nanowire

D. L. Wen, Z. Y. Chen, W. H. Li +7

Searching for new methods controlling antiferromagnetic (AFM) domain wall is one of the most important issues for AFM spintronic device operation. In this work, we study theoretica…