paper

Interface-driven topological Hall effect in SrRuO-SrIrO bilayer

arXiv:1607.07536 · doi:10.1126/sciadv.1600304

Abstract

Electron transport coupled with magnetism has attracted attention over the years as exemplified in anomalous Hall effect due to a Berry phase in momentum space. Another type of unconventional Hall effect -- topological Hall effect, originating from the real-space Berry phase, has recently become of great importance in the context of magnetic skyrmions. We have observed topological Hall effect in bilayers consisting of ferromagnetic SrRuO and paramagnetic SrIrO over a wide region of both temperature and magnetic field. The topological term rapidly decreases with the thickness of SrRuO, ending up with the complete disappearance at 7 unit cells of SrRuO. Combined with model calculation, we concluded that the topological Hall effect is driven by interface Dzyaloshinskii-Moriya interaction, which is caused by both the broken inversion symmetry and the strong spin-orbit coupling of SrIrO. Such interaction is expected to realize the Néel-type magnetic skyrmion, of which size is estimated to be 10 nm from the magnitude of topological Hall resistivity. The results established that the high-quality oxide interface enables us to tune the chirality of the system; this can be a step towards the future topological electronics.

18 pages, 3 figures; revised version has been published in Sci. Adv. 2, e1600304 (2016)

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