Electric-field-controllable high-spin SrRuO3 driven by a solid ionic junction

Abstract

Controlling magnetism and spin structures in strongly correlated systems by using electric field is of fundamental importance but challenging. Here, a high-spin ruthenate phase is achieved via a solid ionic chemical junction at SrRuO3/SrTiO3 interface with distinct formation energies and diffusion barriers of oxygen vacancies, analogue to electronic band alignment in semiconductor heterojunction. Oxygen vacancies trapped within this interfacial SrRuO3 reconstruct Ru-4d electronic structure and orbital occupancy, leading to an enhanced magnetic moment. Furthermore, an interfacial magnetic phase can be switched reversibly by electric-field-rectifying oxygen migration in a solid-state ionic gating device, providing a framework for atomic design of functionalities in strongly correlated oxides using a way of solid chemistry.

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Cited by in corpus (2)

• Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3
• Tailoring topological Hall effect in SrRuO3/SrTiO3 superlattices