Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet
arXiv:2110.08522 · doi:10.1088/1361-648X/ac3102
Abstract
We report on systematic temperature- and magnetic field-dependent studies of the EuGa binary compound, which crystallizes in a centrosymmetric tetragonal BaAl-type structure with space group . The electronic properties of EuGa single crystals, with an antiferromagnetic (AFM) transition at K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching % at 2 K in a magnetic field of 9 T. In the AFM state, EuGa undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. Below , in the 4-7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl-type structure, to which EuGa and EuAl belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands.
arXiv comment15 pages, 6 figures; to be appeared on JPCM
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