Hump-like structure in Hall signal from SrRuO${}_3$ ultra-thin films without inhomogeneous anomalous Hall effect

Abstract

A controversy arose over the interpretation of the recently observed hump features in Hall resistivity ${\rho }_{xy}$ from ultra-thin SrRuO${}_3$ (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic Kerr-effect measurements on 4 unit cell SRO films grown on SrTiO${}_3$ (001) substrates. Clear hump features are observed in the measured ${\rho }_{xy}$, whereas neither hump feature nor double hysteresis loop is seen in the Kerr rotation which should be proportional to the magnetization. In addition, magnetization measurement by superconducting quantum interference device shows no sign of multiple coercive fields. These results show that inhomogeneous AHE alone cannot explain the observed hump behavior in ${\rho }_{xy}$ data from our SRO ultra-thin films. We found that emergence of the hump structure in ${\rho }_{xy}$ is closely related to the growth condition, high quality films having clear sign of humps.

arXiv comment6 pages, 4 figures

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• Stable hump-like Hall effect and non-coplanar spin textures in SrRuO${}_3$ ultrathin film
• Detection of the Chiral Spin Structure in Ferromagnetic SrRuO${}_3$ Thin Film
• Capping and gate control of anomalous Hall effect and hump structure in ultra-thin SrRuO${}_3$ films
• Electric control of two-dimensional Van Hove singularity in oxide ultra-thin films
• Sign competing sources of Berry curvature and anomalous Hall conductance humps in topological ferromagnets
• Bounds and anomalies of inhomogeneous anomalous Hall effects
• Ferromagnetic Two-dimensional Electron Gases with Magnetic Doping and Proximity Effects