Tailoring Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures

Abstract

Engineering the anomalous Hall effect (AHE) in the emerging magnetic topological insulators (MTIs) has great potentials for quantum information processing and spintronics applications. In this letter, we synthesize the epitaxial Bi2Te3/MnTe magnetic heterostructures and observe pronounced AHE signals from both layers combined together. The evolution of the resulting hybrid AHE intensity with the top Bi2Te3 layer thickness manifests the presence of an intrinsic ferromagnetic phase induced by the topological surface states at the heterolayer-interface. More importantly, by doping the Bi2Te3 layer with Sb, we are able to manipulate the sign of the Berry phase-associated AHE component. Our results demonstrate the un-paralleled advantages of MTI heterostructures over magnetically doped TI counterparts, in which the tunability of the AHE response can be greatly enhanced. This in turn unveils a new avenue for MTI heterostructure-based multifunctional applications.

arXiv comment20 pages, 4 figures

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Cited by in corpus (6)

• Distinguishing two-component anomalous Hall effect from topological Hall effect
• Spacer-layer-tunable magnetism and high-field topological Hall effect in topological insulator heterostructures
• Atomic-Layer-Controlled Magnetic Orders in MnBi2Te4-Bi2Te3 Topological Heterostructures
• Topological Insulators-Based Magnetic Heterostructure
• Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations
• Proximity Magnetism in Mn(Bi,Sb)2Te4-(Bi,Sb)2Te3/MnTe Natural Heterostructures