Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Abstract

We report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF2, Pb1-xEuxSe, GaAs, and Bi2Se3 substrates. We show that EuSe growth predominantly in (001) orientation on GaAs(111) and Bi2Se3, but along (111) crystallographic direction on BaF2 (111) and Pb1-xEuxSe (111). High-resolution transmission electron microscopy measurements reveal an abrupt and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found strong hysteresis for the antiferromagnetic-ferrimagnetic transition. An ability to grow epitaxial films of EuSe on Bi2Se3 and of Bi2Se3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.

19pages,13 figures

References in corpus (7)

• Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator
• Tailoring Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures
• Observation of Interfacial Antiferromagnetic Coupling between Magnetic Topological Insulator and Antiferromagnetic Insulator
• Absence of magnetic-proximity effect at the interface of Bi${}_2$Se${}_3$ and (Bi,Sb)${}_2$Te${}_3$ with EuS
• Search for enhanced magnetism at the interface between Bi${}_2$Se${}_3$ and EuSe

Cited by in corpus (1)

• Discovery of a high-temperature antiferromagnetic state and transport signatures of exchange interactions in a Bi2Se3/EuSe heterostructure