628 citations · 2.7k across the 34 of their papers we have counts for
34 papers
Voltage-Controlled Magnetoelectric Devices for Neuromorphic Diffusion Process
Yang Cheng, Qingyuan Shu, Albert Lee +13
Stochastic diffusion processes are pervasive in nature, from the seemingly erratic Brownian motion to the complex interactions of synaptically-coupled spiking neurons. Recently, dr…
Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3
Yuxiang Wang, Minhao Zhao, Jinglei Zhang +24
The Mott-Ioffe-Regel limit sets the lower bound of carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is oft…
Interplay between moment-dependent and field-driven unidirectional magnetoresistance in CoFeB/InSb/CdTe heterostructures
Jiuming Liu, Liyang Liao, Bin Rong +14
Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence o…
Cryogenic quasi-static embedded DRAM for energy-efficient compute-in-memory applications
Yuhao Shu, Hongtu Zhang, Hao Sun +9
Compute-in-memory (CIM) presents an attractive approach for energy-efficient computing in data-intensive applications. However, the development of suitable memory designs to achiev…
SOT-MRAM-Enabled Probabilistic Binary Neural Networks for Noise-Tolerant and Fast Training
Puyang Huang, Yu Gu, Chenyi Fu +10
We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications…
A Read Margin Enhancement Circuit with Dynamic Bias Optimization for MRAM
Renhe Chen, Albert Lee, Zirui Wang +2
This brief introduces a read bias circuit to improve readout yield of magnetic random access memories (MRAMs). A dynamic bias optimization (DBO) circuit is proposed to enable the r…
Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB
Puyang Huang, Aitian Chen, Jianting Dong +9
Magnetic tunneling junctions (MTJs) are essential for non-volatile magneto-resistive random access memory (MRAM) applications. Here, we report the observation of a large negative t…
Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-based Spin-Orbit Torque Devices
Puyang Huang, Xinqi Liu, Yue Xin +12
Non-volatile memristors offer a salient platform for artificial neural network (ANN), but the integration of different function blocks into one hardware system remains challenging.…
Wafer-scale epitaxial growth of the thickness-controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications
Xinqi Liu, Yunyouyou Xia, Lei Gao +20
To harness the intriguing properties of two-dimensional van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis…
Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb2SiTe4
Jing Zhang, Zhilong Yang, Shuai Liu +12
Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as hig…
Tailoring Magnetic Exchange Interactions in Ferromagnet-Intercalated MnBi2Te4 Superlattices
Peng Chen, Qi Yao, Qiang Sun +15
The intrinsic magnetic topological insulator MnBi2Te4 (MBT) has provided a platform for the successful realization of exotic quantum phenomena. To broaden the horizons of MBT-based…
Gate-tunable Intrinsic Anomalous Hall Effect in Epitaxial MnBi2Te4 Films
Shanshan Liu, Jiexiang Yu, Enze Zhang +11
Anomalous Hall effect (AHE) is an important transport signature revealing topological properties of magnetic materials and their spin textures. Recently, antiferromagnetic MnBi2Te4…
Thickness-Driven Quantum Anomalous Hall Phase Transition in Magnetic Topological Insulator Thin Films
Yuchen Ji, Zheng Liu, Peng Zhang +9
The quantized version of anomalous Hall effect realized in magnetic topological insulators (MTIs) has great potential for the development of topological quantum physics and low-pow…
Van der Waals Ferromagnetic Josephson Junctions
Linfeng Ai, Enze Zhang, Ce Huang +11
Superconductor-ferromagnet (S-F) interfaces in two-dimensional (2D) heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetis…
Topological Insulators-Based Magnetic Heterostructure
Qi Yao, Yuchen Ji, Peng Chen +2
The combination of magnetism and topology in magnetic topological insulators (MTIs) has led to unprecedented advancements of time reversal symmetry-breaking topological quantum phy…
The Discovery of Tunable Universality Class in Superconducting -W Thin Films
Ce Huang, Enze Zhang, Yong Zhang +16
The interplay between quenched disorder and critical behavior in quantum phase transitions is conceptually fascinating and of fundamental importance for understanding phase transit…
Observation of topological electronic structure in quasi-1D superconductor TaSe3
Cheng Chen, Aiji Liang, Shuai Liu +21
Topological superconductors (TSCs), with the capability to host Majorana bound states that can lead to non-Abelian statistics and application in quantum computation, have been one…
Tailoring Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures
Peng Chen, Yong Zhang, Qi Yao +14
Engineering the anomalous Hall effect (AHE) in the emerging magnetic topological insulators (MTIs) has great potentials for quantum information processing and spintronics applicati…
Bulk Fermi surface of the layered superconductor TaSe3 with three-dimensional strong topological insulator state
Wei Xia, Xianbiao Shi, Yong Zhang +14
High magnetic field transport measurements and ab initio calculations on the layered superconductor TaSe3 have provided compelling evidences for the existence of a three-dimensiona…
Pressure-induced superconductivity and topological phase transitions in the topological nodal-line semimetal SrAs3
E. J. Cheng, W. Xia, X. B. Shi +16
Topological nodal-line semimetals (TNLSMs) are materials whose conduction and valence bands cross each other, meeting a topologically-protected closed loop rather than discrete poi…
Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect
E. J. Fox, I. T. Rosen, Yanfei Yang +6
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge sta…
Chiral transport along magnetic domain walls in the quantum anomalous Hall effect
I. T. Rosen, E. J. Fox, Xufeng Kou +3
The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Cr…
Zero-field Edge Magnetoplasmons in a Magnetic Topological Insulator
A. C. Mahoney, J. I. Colless, L. Peeters +7
Incorporating ferromagnetic dopants, such as chromium or vanadium, into thin films of the three-dimensional (3D) topological insulator (TI) (Bi,Sb)2Te3 has recently led to the real…
Chiral Majorana edge state in a quantum anomalous Hall insulator-superconductor structure
Qing Lin He, Lei Pan, Alexander L. Stern +16
After the recognition of the possibility to implement Majorana fermions using the building blocks of solid-state matters, the detection of this peculiar particle has been an intens…