activity
20112024
most citedScale-Invariant Dissipationless Chiral Transport in Magnetic Topological Insulators beyond the Two-Dimensional Limit

628 citations · 2.7k across the 34 of their papers we have counts for

collaborators

34 papers

cs.NE2024

Voltage-Controlled Magnetoelectric Devices for Neuromorphic Diffusion Process

Yang Cheng, Qingyuan Shu, Albert Lee +13

Stochastic diffusion processes are pervasive in nature, from the seemingly erratic Brownian motion to the complex interactions of synaptically-coupled spiking neurons. Recently, dr…

cond-mat.str-el2024★ 2 cited

Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3

Yuxiang Wang, Minhao Zhao, Jinglei Zhang +24

The Mott-Ioffe-Regel limit sets the lower bound of carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is oft…

physics.app-ph2023

Interplay between moment-dependent and field-driven unidirectional magnetoresistance in CoFeB/InSb/CdTe heterostructures

Jiuming Liu, Liyang Liao, Bin Rong +14

Magnetoresistance effects are crucial for understanding the charge/spin transport as well as propelling the advancement of spintronic applications. Here we report the coexistence o…

cs.ET2023

Cryogenic quasi-static embedded DRAM for energy-efficient compute-in-memory applications

Yuhao Shu, Hongtu Zhang, Hao Sun +9

Compute-in-memory (CIM) presents an attractive approach for energy-efficient computing in data-intensive applications. However, the development of suitable memory designs to achiev…

physics.app-ph2023

SOT-MRAM-Enabled Probabilistic Binary Neural Networks for Noise-Tolerant and Fast Training

Puyang Huang, Yu Gu, Chenyi Fu +10

We report the use of spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) to implement a probabilistic binary neural network (PBNN) for resource-saving applications…

eess.SP2023

A Read Margin Enhancement Circuit with Dynamic Bias Optimization for MRAM

Renhe Chen, Albert Lee, Zirui Wang +2

This brief introduces a read bias circuit to improve readout yield of magnetic random access memories (MRAMs). A dynamic bias optimization (DBO) circuit is proposed to enable the r…