Record-High Proximity-Induced Anomalous Hall Effect in (Bi${}_x$Sb${}_{1-x}$)2Te${}_3$ Thin Film Grown on CrGeTe${}_3$ Substrate

Abstract

Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping precess. In an effort to boost the quantization temperature of QAHE, magnetic proximity effect in magnetic insulator/TI heterostructures has been extensively investigated. However, the observed anomalous Hall resistance has never been more than several Ohms, presumably owing to the interfacial disorders caused by the structural and chemical mismatch. Here, we show that, by growing (BixSb1-x)2Te3(BST) thin films on structurally and chemically well-matched, ferromagnetic-insulating CeGeTe3(CGT) substrates, the proximity-induced anomalous Hall resistance can be enhanced by more than an order of magnitude. This sheds light on the importance of structural and chemical match for magnetic insulator/TI proximity systems.

arXiv comment33 pages, 10 figures including supporting information,accepted by Nano Letters

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• Tailoring Hybrid Anomalous Hall Response in Engineered Magnetic Topological Insulator Heterostructures
• Adsorption-controlled growth of MnTe(Bi2Te3)n by molecular beam epitaxy exhibiting stoichiometry-controlled magnetism
• Anisotropic magnon damping by zero-temperature quantum fluctuations in ferromagnetic CrGeTe${}_3$
• Hybrid symmetry epitaxy of superconducting Fe(Te,Se) film on a topological insulator
• Polaronic Conductivity in Cr${}_2$Ge${}_2$Te${}_6$ Single Crystals
• Structurally and Chemically Compatible BiInSe3 Substrate for Topological Insulator Thin Films
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