Structurally and Chemically Compatible BiInSe3 Substrate for Topological Insulator Thin Films

Abstract

Quality of epitaxial films strongly depends on their structural and chemical match with the substrates: the more closely they match, the better the film quality is. Topological insulators (TI) such as Bi2Se3 thin films are of no exception. However, there do not exist commercial substrates that match with TI films both structurally and chemically, at the level commonly available for other electronic materials. Here, we introduce BiInSe3 bulk crystal as the best substrate for Bi2Se3 thin films. These films exhibit superior surface morphology, lower defect density and higher Hall mobility than those on other substrates, due to structural and chemical match provided by the BiInSe3 substrate. BiInSe3 substrate could accelerate the advance of TI research and applications.

8 pages, 4 figures, accepted to Nano Research

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Cited by in corpus (7)

• Hybrid symmetry epitaxy of superconducting Fe(Te,Se) film on a topological insulator
• Suppressing carrier density in (BixSb1-x)2Te3 films using Cr2O3 interfacial layers
• Atomic-Layer-Controlled Magnetic Orders in MnBi2Te4-Bi2Te3 Topological Heterostructures
• Resilient Growth of Highly Crystalline Topological Insulator-Superconductor Heterostructure Enabled by Ex-situ Nitride Film
• Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy
• From classical to quantum regime of topological surface states via defect engineering
• Nucleation and Antiphase Twin Control in Bi${}_2$Se${}_3$ via Step-Terminated Al${}_2$O${}_3$ Substrates