activity
20172019
most citedEfficient Charge-Spin Conversion and Magnetization Switching though Rashba Effect at Topological Insulator/Ag Interface

69 citations · 210 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall201961 cited

Record-High Proximity-Induced Anomalous Hall Effect in (BiSb)2Te Thin Film Grown on CrGeTe Substrate

Xiong Yao, Bin Gao, Myung-Geun Han +6

Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping…

cond-mat.mtrl-sci201921 cited

Ferromagnetic Anomalous Hall Effect in Cr-doped BiSe Thin Films via Surface-State Engineering

Jisoo Moon, Jinwoong Kim, Nikesh Koirala +3

The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. W…

cond-mat.mtrl-sci201838 cited

Solution to the hole-doping problem and tunable quantum Hall effect in BiSe thin films

Jisoo Moon, Nikesh Koirala, Maryam Salehi +3

BiSe, one of the most widely studied topological insulators (TIs), is naturally electron-doped due to n-type native defects. However, many years of efforts to achieve p…

cond-mat.mtrl-sci201869 cited

Efficient Charge-Spin Conversion and Magnetization Switching though Rashba Effect at Topological Insulator/Ag Interface

Shuyuan Shi, Aizhu Wang, Yi Wang +8

We report the observation of efficient charge-to-spin conversion in the three-dimensional topological insulator (TI) Bi2Se3 and Ag bilayer by the spin-torque ferromagnetic resonanc…

cond-mat.mes-hall201721 cited

Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in BiSe with high charge-carrier density

E. K. de Vries, S. Pezzini, M. J. Meijer +6

Topological insulators are ideally represented as having an insulating bulk with topologically protected, spin-textured surface states. However, it is increasingly becoming clear t…