activity
20172023
most citedEfficient Charge-Spin Conversion and Magnetization Switching though Rashba Effect at Topological Insulator/Ag Interface

69 citations · 252 across the 9 of their papers we have counts for

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Showing 2019Show all

7 papers · 1 filter

cond-mat.mtrl-sci20196 cited

Observation of optical absorption correlated with surface state of topological insulator

Jiwon Jeon, Kwangnam Yu, Jiho Kim +3

We performed broadband optical transmission measurements of Bi2Se3 and In-doped Bi(1-x)In(x)2Se3 thin films, where in the latter the spin-orbit coupling (SOC) strength can be tuned…

cond-mat.mtrl-sci2019

Electronic correlation determining correlated plasmons in Sb-doped BiSe

P. K. Das, T. J. Whitcher, M. Yang +15

Electronic correlation is believed to play an important role in exotic phenomena such as insulator-metal transition, colossal magneto resistance and high temperature superconductiv…

cond-mat.mtrl-sci2019

Pb-doped p-type BiSe thin films via interfacial engineering

Jisoo Moon, Zengle Huang, Weida Wu +1

Due to high density of native defects, the prototypical topological insulator (TI), BiSe, is naturally n-type. Although BiSe can be converted into p-type by substit…

cond-mat.mes-hall201961 cited

Record-High Proximity-Induced Anomalous Hall Effect in (BiSb)2Te Thin Film Grown on CrGeTe Substrate

Xiong Yao, Bin Gao, Myung-Geun Han +6

Quantum anomalous Hall effect(QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators(TIs) due to limitations inherent with the doping…

cond-mat.mtrl-sci201921 cited

Ferromagnetic Anomalous Hall Effect in Cr-doped BiSe Thin Films via Surface-State Engineering

Jisoo Moon, Jinwoong Kim, Nikesh Koirala +3

The anomalous Hall effect (AHE) is a non-linear Hall effect appearing in magnetic conductors, boosted by internal magnetism beyond what is expected from the ordinary Hall effect. W…

cond-mat.mtrl-sci2019

Gate tunable quantum Hall effects in defect-suppressed Bi2Se3 films

N. Koirala, M. Salehi, J. Moon +1

Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far f…