Disorder-driven topological phase transition in Bi2Se3 films

Abstract

Topological insulators (TI) are a phase of matter that host unusual metallic states on their surfaces. Unlike the states that exist on the surface of conventional materials, these so-called topological surfaces states (TSS) are protected against disorder-related localization effects by time reversal symmetry through strong spin-orbit coupling. By combining transport measurements, angle-resolved photo-emission spectroscopy and scanning tunneling microscopy, we show that there exists a critical level of disorder beyond which the TI Bi2Se3 loses its ability to protect the metallic TSS and transitions to a fully insulating state. The absence of the metallic surface channels dictates that there is a change in topological character, implying that disorder can lead to a topological phase transition even without breaking the time reversal symmetry. This observation challenges the conventional notion of topologically-protected surface states, and will provoke new studies as to the fundamental nature of topological phase of matter in the presence of disorder.

arXiv commentAccepted in PRB

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Cited by in corpus (9)

• Observation of spin-momentum locked surface states in amorphous Bi${}_2$Se${}_3$
• Amorphous topological matter: theory and experiment
• Solution to the hole-doping problem and tunable quantum Hall effect in Bi${}_2$Se${}_3$ thin films
• Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi${}_2$Se${}_3$ with high charge-carrier density
• Embracing Disorder in Quantum Materials Design
• Unveiling quasiparticle dynamics of topological insulators through Bayesian modelling
• Topological phase transition with nanoscale inhomogeneity in (Bi${}_{1-x}$In${}_x$)${}_2$Se${}_3$
• Resilient Growth of Highly Crystalline Topological Insulator-Superconductor Heterostructure Enabled by Ex-situ Nitride Film
• From classical to quantum regime of topological surface states via defect engineering