Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi${}_2$Se${}_3$ with high charge-carrier density

Abstract

Topological insulators are ideally represented as having an insulating bulk with topologically protected, spin-textured surface states. However, it is increasingly becoming clear that these surface transport channels can be accompanied by a finite conducting bulk, as well as additional topologically trivial surface states. To investigate these parallel conduction transport channels, we studied Shubnikov-de Haas oscillations in Bi${}_2$Se${}_3$ thin films, in high magnetic fields up to 30 T so as to access channels with a lower mobility. We identify a clear Zeeman-split bulk contribution to the oscillations from a comparison between the charge-carrier densities extracted from the magnetoresistance and the oscillations. Furthermore, our analyses indicate the presence of a two-dimensional state and signatures of additional states the origin of which cannot be conclusively determined. Our findings underpin the necessity of theoretical studies on the origin of and the interplay between these parallel conduction channels for a careful analysis of the material's performance.

arXiv commentManuscript including supplemental material

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• Observation of multichannel quantum coherent transport and electron-electron interaction in Bi2Te3 single crystal
• A tight-binding model for the band dispersion in rhombohedral topological insulators over the whole Brilluoin zone
• Bulk contribution to magnetotransport properties of low defect-density Bi${}_2$Te${}_3$ topological insulator thin films
• Transport properties of a 1000-nm HgTe film: the interplay of surface and bulk carriers
• Voltage-Controlled Topological-Spin Switch for Ultra-Low-Energy Computing--Performance Modeling and Benchmarking
• From classical to quantum regime of topological surface states via defect engineering
• A Green's function approach to Topological Insulator junctions with magnetic and superconducting regions