Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
arXiv:1009.2879 · doi:10.1038/ncomms1131
Abstract
Topological insulators are a recently discovered class of materials with fascinating properties: While the inside of the solid is insulating, fundamental symmetry considerations require the surfaces to be metallic. The metallic surface states show an unconventional spin texture, electron dynamics and stability. Recently, surfaces with only a single Dirac cone dispersion have received particular attention. These are predicted to play host to a number of novel physical phenomena such as Majorana fermions, magnetic monopoles and unconventional superconductivity. Such effects will mostly occur when the topological surface state lies in close proximity to a magnetic or electric field, a (superconducting) metal, or if the material is in a confined geometry. Here we show that a band bending near to the surface of the topological insulator BiSe gives rise to the formation of a two-dimensional electron gas (2DEG). The 2DEG, renowned from semiconductor surfaces and interfaces where it forms the basis of the integer and fractional quantum Hall effects, two-dimensional superconductivity, and a plethora of practical applications, coexists with the topological surface state in BiSe. This leads to the unique situation where a topological and a non-topological, easily tunable and potentially superconducting, metallic state are confined to the same region of space.
12 pages, 3 figures
References in corpus (7)
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
- Topological Insulators with Inversion Symmetry
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- First direct observation of Spin-textures in Topological Insulators : Spin-resolved ARPES as a probe of topological quantum spin Hall effect and Berry's phase
- Topological Surface States Protected From Backscattering by Chiral Spin Texture
Cited by in corpus (92)
- Dirac materials
- Electronic structure of quantum materials studied by angle-resolved photoemission spectroscopy
- Emergent quantum confinement at topological insulator surfaces
- Topological-Metal to Band-Insulator Transition in (Bi1-xInx)2Se3 Thin Films
- Direct Measurement of the Out-of-Plane Spin Texture in the Dirac Cone Surface State of a Topological Insulator
- Ultrafast helicity control of surface currents in topological insulators with near-unity fidelity
- Transport Properties of Topological Insulators: Band Bending, Bulk Metal-to-Insulator Transition, and Weak Anti-Localization
- Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
- Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films
- All-optical probe of three-dimensional topological insulators based on high-harmonic generation by circularly-polarized laser fields
- Ultrafast photodoping and effective Fermi-Dirac distribution of the Dirac particles in Bi2Se3
- Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder
- Signatures of Dirac fermion-mediated magnetic order
- Time-resolved terahertz dynamics in thin films of the topological insulator BiSe
- Unoccupied Topological States on Bismuth Chalcogenides
- Bulk Band Structure of BiTe
- Efficient Charge-Spin Conversion and Magnetization Switching though Rashba Effect at Topological Insulator/Ag Interface
- Circular dichroism in angle-resolved photoemission spectroscopy of topological insulators
- Plasmonics in topological insulators: Spin-charge separation, the influence of the inversion layer, and phonon-plasmon coupling
- Surface Theory of a Family of Topological Kondo Insulators
- Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons
- Anisotropic effect of warping on the lifetime broadening of topological surface states in angle-resolved photoemission from BiTe
- Topological Crystalline Insulator Nanostructures
- Restoring Pristine Bi2Se3 Surface with an Effective Se Decapping Process
- Observation of Chiral Surface Excitons in a Topological Insulator BiSe
- Nonlinear Optical Observation of Coherent Acoustic Dirac Plasmons in Thin-Film Topological Insulators
- Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States
- Origin of the Electron-Phonon Interaction of Topological Semimetal Surfaces Measured with Helium Atom Scattering
- Photoemission induced gating of topological insulator
- Berry curvature induced magnetotransport in 3D noncentrosymmetric metals
- Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on BiSe
- Modification and Control of Topological Insulator Surface States Using Surface Disorder
- Response of the topological surface state to surface disorder in TlBiSe
- Accessing the spectral function of in operando devices by angle-resolved photoemission spectroscopy
- Optical manipulation of Rashba-split 2-Dimensional Electron Gas
- Band Structure of Topological Insulator BiSbTe1.25Se1.75
- Dirac states with knobs on: interplay of external parameters and the surface electronic properties of 3D topological insulators
- Trigger of the ubiquitous surface band bending in 3D topological insulators
- Dirac cone shift of a passivated topological Bi2Se3 interface state
- Probing Dirac Fermion Dynamics in Topological Insulator BiSe Films with Scanning Tunneling Microscope
- Quantum capacitance of an ultrathin topological insulator film in a magnetic field
- Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in BiSe with high charge-carrier density
- Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-InSe
- Engineered Near-Perfect Back-Scattering on Surface of Topological Insulator with Non-Magnetic Impurities
- Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes
- Van der Waals epitaxial growth of topological insulator BiSbTeSe ultrathin nanoplate on electrically insulating fluorophlogopite mica
- Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator
- Andreev Reflection in Fermi Arc Surface States of Weyl Semimetals
- Controlling the 2DEG states evolution at a metal/BiSe interface
- Charge puddles in a completely compensated topological insulator
- A Novel Ferroelectric Rashba Semiconductor
- Josephson Effect and Charge Distribution in Thin BiTe Topological Insulators
- Spin-Polarized Quantum Well States on BiFeSe
- Spin-Hall effect due to the bulk states of topological insulators: Extrinsic contribution to the conserved spin current
- Coupling-decoupling of conducting topological surface states in thick BiSe single crystals
- Topological insulator spin transistor
- Observation of Weyl and Dirac fermions at smooth topological Volkov-Pankratov heterojunctions
- Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator
- Anomalous nuclear magnetic resonance spectra in BiSe nanowires
- Thermoelectric and optical probes for a Fermi surface topology change in noncentrosymmetric metals
- Emergence of Quantum Confinement in Topological Kagome Superconductor CsVSb family
- Dynamic Opening of a Gap in Dirac Surface States of the Thin-Film 3D Topological Insulator Bi2Se3 Driven by the Dynamic Rashba Effect
- Real-space characterization of reactivity towards water at Bi2Te3(111) surface
- Dispersive Drumhead States in Nodal-Line Semimetal Junctions
- Magnetotransport and Berry phase Tuning in Gd-doped Bi2Se3 Topological Insulator Single Crystals
- Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures
- Spatially modulated magnetic structure of EuS due to the tetragonal domain structure of SrTiO
- Low-energy modeling of three-dimensional topological insulator nanostructures
- Orbital contributions in the element-resolved valence electronic structure of Bi2Se3
- From classical to quantum regime of topological surface states via defect engineering
- Electron pairing with gapless excitations in mixed double layers
- Dynamical polarization and plasmons in noncentrosymmetric metals
- Bulk band structure of SbTe determined by angle-resolved photoemission spectroscopy
- Autonomous microARPES
- Collective excitations of a system of coupled relativistic and non-relativistic two-dimensional electron gases
- Real-space nanoimaging of THz polaritons in the topological insulator Bi2Se3
- An autoencoder for compressing angle-resolved photoemission spectroscopy data
- Universal Conductance Fluctuations of Topological Insulators
- Emergent topological states via digital (001) oxide superlattices
- Non-linear hybrid surface-defect states in defective BiSe
- Preservation of Topological Surface States in Millimeter-Scale Transferred Membranes
- Coexistence of Rashba and Dirac dispersions on the surface of centrosymmetric topological insulator decorated with transition metals
- Control of 2D plasmons in the topological insulator Bi2Se3 with highly crystalline C60 overlayers
- Bulk Rashba spin splitting and Dirac surface state in -type (BiSbSe single crystal
- Fabrication and Characterization of Superconducting Quantum Interference Device using (Bi_{1-x}Sb_x)_2Se_3 Topological Insulator Nanoribbons
- Surface-dominated Conductivity of Few-layered Antimonene
- Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene
- In-plane magnetic field-driven symmetry breaking in topological insulator-based three-terminal junctions
- Topological electronic structure of YbMgBi and CaMgBi
- Terahertz electro-optic effect in BiSe crystals
- Aging of the surface of Bi(2)Se(3)
- High repetition rate Time-Resolved VUV ARPES at 10.8 eV photon energy