Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3

Abstract

Topological insulators are a recently discovered class of materials with fascinating properties: While the inside of the solid is insulating, fundamental symmetry considerations require the surfaces to be metallic. The metallic surface states show an unconventional spin texture, electron dynamics and stability. Recently, surfaces with only a single Dirac cone dispersion have received particular attention. These are predicted to play host to a number of novel physical phenomena such as Majorana fermions, magnetic monopoles and unconventional superconductivity. Such effects will mostly occur when the topological surface state lies in close proximity to a magnetic or electric field, a (superconducting) metal, or if the material is in a confined geometry. Here we show that a band bending near to the surface of the topological insulator Bi${}_2$Se${}_3$ gives rise to the formation of a two-dimensional electron gas (2DEG). The 2DEG, renowned from semiconductor surfaces and interfaces where it forms the basis of the integer and fractional quantum Hall effects, two-dimensional superconductivity, and a plethora of practical applications, coexists with the topological surface state in Bi${}_2$Se${}_3$. This leads to the unique situation where a topological and a non-topological, easily tunable and potentially superconducting, metallic state are confined to the same region of space.

arXiv comment12 pages, 3 figures

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Cited by in corpus (217)

• Dirac materials
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• Rashba spin-splitting control at the surface of the topological insulator Bi2Se3
• Direct Measurement of the Out-of-Plane Spin Texture in the Dirac Cone Surface State of a Topological Insulator
• Tolerance of topological surface states towards magnetic moments: Fe on Bi2Te3 and Bi2Se3
• Persistence of Topological Order and Formation of Quantum Well States in Topological Insulators Bi2(Se,Te)3 under Ambient Conditions
• Ultrafast helicity control of surface currents in topological insulators with near-unity fidelity
• Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering
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• Experimental evidence of large-gap two-dimensional topological insulator on the surface of ZrTe5
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• Evidence for a direct band gap in the topological insulator Bi2Se3 from theory and experiment
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• Gate-tuned Differentiation of Surface-conducting States in Bi1.5Sb0.5Te1.7Se1.3 Topological-insulator Thin Crystals
• Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping
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• Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility
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• Surface Theory of a Family of Topological Kondo Insulators
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• Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons
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• Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States
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• Direct band structure measurement of a buried two-dimensional electron gas
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• Experimental verification of the surface termination in the topological insulator TlBiSe${}_2$ using core-level photoelectron spectroscopy and scanning tunneling microscopy
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• Comparative study of rare earth hexaborides using high resolution angle-resolved photoemission
• Probing Dirac Fermion Dynamics in Topological Insulator Bi${}_2$Se${}_3$ Films with Scanning Tunneling Microscope
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• Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi${}_2$Se${}_3$ with high charge-carrier density
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• Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes
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• Controlling the 2DEG states evolution at a metal/Bi${}_2$Se${}_3$ interface
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• Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures
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• Shubnikov de Haas quantum oscillation of the surface states in the metallic Bismuth Telluride sheets
• Low-energy modeling of three-dimensional topological insulator nanostructures
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• Pb-doped p-type Bi${}_2$Se${}_3$ thin films via interfacial engineering
• Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods
• From classical to quantum regime of topological surface states via defect engineering
• Detection of current induced spin polarization in epitaxial Bi${}_2$Te${}_3$ thin film
• Autonomous microARPES
• Electron pairing with gapless excitations in mixed double layers
• Bulk band structure of Sb${}_2$Te${}_3$ determined by angle-resolved photoemission spectroscopy
• Synchrotron-radiation studies of topological insulators
• Real-space nanoimaging of THz polaritons in the topological insulator Bi2Se3
• An autoencoder for compressing angle-resolved photoemission spectroscopy data
• Collective excitations of a system of coupled relativistic and non-relativistic two-dimensional electron gases
• Spatial Distribution of Topological Surface State Electrons in Bi${}_2$Te${}_3$ Probed by Low Energy Na${}^{+}$ Ion Scattering
• Universal Conductance Fluctuations of Topological Insulators
• Spatial Distribution of Topological Surface State Electrons in Bi${}_2$Se${}_3$ Probed by Na${}^{+}$ Low Energy Ion Scattering
• Topologically protected states in $\delta$-doped junctions with band inversion
• Emergent topological states via digital (001) oxide superlattices
• The Thomas-Fermi and the Thomas-Fermi-Dirac Models in Two-Dimension- the Effect of Strong Quantizing Magnetic Field
• Non-linear hybrid surface-defect states in defective Bi${}_2$Se${}_3$
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• Preservation of Topological Surface States in Millimeter-Scale Transferred Membranes
• RF compressibility of topological surface and interface states in metal-hBN-Bi2Se3 capacitors
• Fabrication and Characterization of Superconducting Quantum Interference Device using (Bi_{1-x}Sb_x)_2Se_3 Topological Insulator Nanoribbons
• Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi${}_{0.9}$Sb${}_{0.1}{)}_2$Se${}_3$ single crystal
• Surface-dominated Conductivity of Few-layered Antimonene
• Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene
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• Control of 2D plasmons in the topological insulator Bi2Se3 with highly crystalline C60 overlayers
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• High repetition rate Time-Resolved VUV ARPES at 10.8 eV photon energy
• Tuning Chemical Potential in the Dirac Cone by Compositional Engineering
• Aging of the surface of Bi(2)Se(3)
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• Commentary on the Interpretation of Fourier-Transform Scanning Tunneling Microscopy Data