Control of 2D plasmons in the topological insulator Bi2Se3 with highly crystalline C60 overlayers

Abstract

Topological Insulators (TIs) present an interesting materials platform for nanoscale, high frequency devices because they support high mobility, low scattering electronic transport within confined surface states. However, a robust methodology to control the properties of surface plasmons in TIs has yet to be developed. We propose that charge transfer between Bi${}_2$Se${}_3$ and crystalline C${}_{60}$ films may provide tunable control of the two-dimensional plasmons in Bi${}_2$Se${}_3$. We have grown heterostructures of Bi${}_2$Se${}_3$/C${}_{60}$ with exceptional crystallinity. Electron energy loss spectroscopy (EELS) reveals significant hybridisation of $\pi$ states at the interface, despite the expectation for only weak van der Waals interactions, including quenching of 2D plasmons. Momentum-resolved EELS measurements are used to probe the plasmon dispersion, with Density Functional Theory predictions providing an interpretation of results based on interfacial charge dipoles. Our measurements suggest a robust methodology for tuneable TI interfaces that can be engineered for plasmonic applications in computing, communications and sensing.

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