Observation of highly dispersive bands in pure thin film C${}_{60}$

Abstract

While long-theorized, the direct observation of multiple highly dispersive C${}_{60}$ valence bands has eluded researchers for more than two decades due to a variety of intrinsic and extrinsic factors. Here we report a realization of multiple highly dispersive (330-520 meV) valence bands in pure thin film C${}_{60}$ on a novel substrate--the three-dimensional topological insulator Bi${}_2$Se${}_3$--through the use of angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The effects of this novel substrate reducing C${}_{60}$ rotational disorder are discussed. Our results provide important considerations for past and future band structure studies as well as the increasingly popular C${}_{60}$ electronic device applications, especially those making use of heterostructures.

arXiv comment7 pages, 4 figures

References in corpus (1)

• C${}_{60}$ in Reflection Nebulae

Cited by in corpus (5)

• Ultrafast charge-transfer exciton dynamics in C${}_{60}$ thin films
• Signatures of an Atomic Crystal in the Band Structure of a Molecular Thin Film
• Revealing Hidden Spin Polarization in Centrosymmetric van der Waals Materials on Ultrafast Timescales
• Orbital character effects in the photon energy and polarization dependence of pure C60 photoemission
• Control of 2D plasmons in the topological insulator Bi2Se3 with highly crystalline C60 overlayers