Suppressing twin formation in Bi2Se3 thin films

Abstract

The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defects that persist in the "twin-free" films is an antiphase domain boundary, which is associated with variations in substrate height. It is also shown that the substrate surface termination determines which family of twin domains dominates.

References in corpus (12)

• Topological Insulators
• First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
• The quantum spin Hall effect and topological insulators
• p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications
• Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
• Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
• Spatial Fluctuations of Helical Dirac Fermions on the Surface of Topological Insulators
• Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
• Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator
• Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy
• Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B
• Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates

Cited by in corpus (18)

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• Magneto-optics of massive Dirac fermions in bulk Bi2Se3
• Milliwatt terahertz harmonic generation from topological insulator metamaterials
• Induced unconventional superconductivity on the surface states of Bi${}_2$Te${}_3$ topological insulator
• Structural distortion behind the nematic superconductivity in Sr${}_x$Bi${}_2$Se${}_3$
• Full orientation control of epitaxial MoS2 on hBN assisted by substrate defects
• Characterizing the Structure of Topological Insulator Thin Films
• Epitaxy and Structural Properties of (V,Bi,Sb)${}_2$Te${}_3$ Layers Exhibiting the Quantum Anomalous Hall Effect
• Studies on the origin of the interfacial superconductivity of Sb2Te3/Fe1+yTe heterostructures
• Optimization of the growth of the van der Waals materials Bi2Se3 and (Bi0.5In0.5)2Se3 by molecular beam epitaxy
• Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy
• Structurally and Chemically Compatible BiInSe3 Substrate for Topological Insulator Thin Films
• Effect of Sr doping on structure, morphology and transport properties of Bi${}_2$Se${}_3$ epitaxial thin films
• Breaking crystalline symmetry of epitaxial SnTe films by strain
• Local moment formation and magnetic coupling of Mn guest atoms in Bi${}_2$Se${}_3$: a low-temperature ferromagnetic resonance study
• Twin Domain Structure in Magnetically Doped Topological Insulators
• Control of 2D plasmons in the topological insulator Bi2Se3 with highly crystalline C60 overlayers
• Nucleation and Antiphase Twin Control in Bi${}_2$Se${}_3$ via Step-Terminated Al${}_2$O${}_3$ Substrates