activity
20152021
most citedScaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics

90 citations · 284 across the 4 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall202150 cited

Any Axion Insulator Must be a Bulk Three-Dimensional Topological Insulator

K. M. Fijalkowski, N. Liu, M. Hartl +11

In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination o…

cond-mat.mes-hall201790 cited

Scaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics

S. Grauer, K. M. Fijalkowski, S. Schreyeck +5

We report on the scaling behavior of V-doped (Bi,Sb)Te samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall…

cond-mat.mtrl-sci2016

Kinetic limitation of chemical ordering in BiTeSe layers grown by molecular beam epitaxy

S. Schreyeck, K. Brunner, A. Kirchner +7

We study the chemical ordering in BiTeSe grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and deter…

cond-mat.mes-hall201578 cited

Magneto-optics of massive Dirac fermions in bulk Bi2Se3

M. Orlita, B. A. Piot, G. Martinez +13

We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a si…

cond-mat.mtrl-sci201566 cited

Suppressing twin formation in Bi2Se3 thin films

N. V. Tarakina, S. Schreyeck, M. Luysberg +8

The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been…