Characterizing the Structure of Topological Insulator Thin Films

Abstract

We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi,Sb)2Te3 and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO3 and the use of capping layers to protect topological insulator films from oxidation and exposure.

References in corpus (21)

• Topological Insulators
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
• Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator
• Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
• Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3
• Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films
• Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator
• Precise quantization of anomalous Hall effect near zero magnetic field
• Reactive chemical doping of the $B{i}_{2}S{e}_3$ topological insulator
• Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
• Giant Anisotropic Magnetoresistance in a Quantum Anomalous Hall Insulator
• Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B
• Fermi level tuning and a large activation gap achieved in the topological insulator Bi_{2}Te_{2}Se by Sn doping
• Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates
• Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction
• Suppressing twin formation in Bi2Se3 thin films
• Electrically tuned magnetic order and magnetoresistance in a topological insulator
• Restoring Pristine Bi2Se3 Surface with an Effective Se Decapping Process
• Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

Cited by in corpus (13)

• Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
• Mapping the chemical potential dependence of current-induced spin polarization in a topological insulator
• Persistent Optical Gating of a Topological Insulator
• Opto-Electronic Characterization of Three Dimensional Topological Insulators
• Perspective: Heusler interfaces -- opportunities beyond spintronics?
• Local optical control of ferromagnetism and chemical potential in a topological insulator
• Chromium-Induced Ferromagnetism with Perpendicular Anisotropy in Topological Crystalline Insulator SnTe (111) Thin Films
• Importance of van der Waals interactions for ab initio studies of topological insulators
• Exploiting the close-to-Dirac point shift of Fermi level in Sb2Te3/Bi2Te3 topological insulator heterostructure for spin-charge conversion
• Structurally and Chemically Compatible BiInSe3 Substrate for Topological Insulator Thin Films
• Large-scale defects hidden inside a topological insulator grown onto a 2D substrate
• Nucleation and Antiphase Twin Control in Bi${}_2$Se${}_3$ via Step-Terminated Al${}_2$O${}_3$ Substrates
• Visualizing the in-gap states in domain boundaries of ultra-thin topological insulator films