Perspective: Heusler interfaces -- opportunities beyond spintronics?

Abstract

Heusler compounds, in both cubic and hexagonal polymorphs, exhibit a remarkable range of electronic, magnetic, elastic, and topological properties, rivaling that of the transition metal oxides. To date, research on these quantum materials has focused primarily on bulk magnetic and thermoelectric properties or on applications in spintronics. More broadly, however, Heuslers provide a platform for discovery and manipulation of emergent properties at well-defined crystalline interfaces. Here, motivated by advances in the epitaxial growth of layered Heusler heterostructures, I present a vision for Heusler interfaces, focusing on the frontiers and challenges that lie beyond spintronics. The ability to grow these materials epitaxially on technologically important semiconductor substrates, such as GaAs, Ge, and Si, provides a direct path for their integration with modern electronics. Further advances will require new methods to control the stoichiometry and defects to "electronic grade" quality, and to control the interface abruptness and ordering at the atomic scale.

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Cited by in corpus (7)

• Controlling the balance between remote, pinhole, and van der Waals epitaxy of Heusler films on graphene/sapphire
• High electrical conductivity in the epitaxial polar metals LaAuGe and LaPtSb
• Control of polymorphism during epitaxial growth of hyperferroelectric candidate LiZnSb on GaSb (111)B
• Electronic correlations in the semiconducting half-Heusler compound FeVSb
• Semi-adsorption-controlled growth window for half Heusler FeVSb epitaxial films
• Understanding Magnetic Phase Coexistence in Ru${}_2$Mn${}_{1-x}$Fe${}_x$Sn Heusler Alloys: A Neutron Scattering, Thermodynamic, and Phenomenological Analysis
• Self-regulated growth of candidate topological superconducting parkerite by molecular beam epitaxy