Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal

Abstract

High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2K in a magnetic field of 1T. Magneto-transport measurements demonstrated that the large low-field magnetoresistance effect resulted from the coexistence of field-induced metal-semiconductor transition and weak-antilocalization effect. Moreover, Hall measurements indicated that ScPtBi single crystal showed a high mobility over a wide temperature region even up to room temperature (4050 cm2V-1s-1 at 2K - 2016 cm2V-1s-1 at 300K). These findings not only suggest the nonmagnetic ScPtBi semimetal a potential material candidate for applications in high-sensitivity magnetic sensors, but also are of great significance to comprehensively understand the rare-earth based half-Heusler compounds.

arXiv comment12 pages, 4 figures, accepted for publication in Applied Physics Letters 107 (2015)

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• Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi
• Negative longitudinal magnetoresistance as a sign of a possible chiral magnetic anomaly in the half-Heusler antiferromagnet DyPdBi
• Weak antilocalization in a noncentrosymmetric CaAgBi single crystal
• Perspective: Heusler interfaces -- opportunities beyond spintronics?
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• Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice
• The Emerging Weak Antilocalization Effect in Semimetal Ta${}_{0.7}$Nb${}_{0.3}$Sb${}_2$ Single Crystal
• Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal
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• NMR Evidence for the Topologically Nontrivial Nature in a Family of Half-Heusler Compounds