Dramatic Mobility Enhancements in Doped SrTiO3 Thin Films by Defect Management
arXiv:1006.1564 · doi:10.1063/1.3457994
Abstract
We report bulk-quality n-type SrTiO3 (n-SrTiO3) thin films fabricated by pulsed laser deposition, with electron mobility as high as 6600 cm2 V-1 s-1 at 2 K and carrier density as low as 2.0 x 10^18cm-3 (~ 0.02 at. %), far exceeding previous pulsed laser deposition films. This result stems from precise strontium and oxygen vacancy defect chemistry management, providing a general approach for defect control in complex oxide heteroepitaxy.
13 pages, 4 figures
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- Enhanced Superconducting Transition Temperature due to Tetragonal Domains in Two-Dimensionally Doped SrTiO
- Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO thin-films controlled by defects
- Electrochemical Strain Microscopy with Blocking Electrodes: The Role of Electromigration and Diffusion
- Perspective: Heusler interfaces -- opportunities beyond spintronics?
- Electrical Degradation in Dielectric and Piezoelectric Oxides: Review of Defect Chemistry and Associated Characterization Techniques
- Superconducting tunneling spectroscopy of spin-orbit coupling and orbital depairing in Nb:SrTiO
- Large-scale modulation in the superconducting properties of thin films due to domains in the substrate
- Electron gas induced in SrTiO
- Sequential pulsed laser deposition of homoepitaxial SrTiO thin films