Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface

Abstract

We have investigated the transport properties of LaVO_3/SrTiO_3 Mott insulator/band insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_2/LaO/TiO_2 polar discontinuity is conducting, exhibiting a LaVO_3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO_2/SrO/TiO_2 interface, formed by inserting a single layer of bulk metallic SrVO_3 or SrO, drives the interface insulating. The (110) heterointerface is also insulating, indicating interface conduction arising from electronic reconstructions.

18 pages, 5 figures

References in corpus (1)

• Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping

Cited by in corpus (6)

• Polar catastrophe and electronic reconstructions at the LaAlO3/SrTiO3 interface: evidence from optical second harmonic generation
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• Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity
• Spin, Orbital and Charge Order at the Interface between Correlated Oxides
• Aspects of metallic low-temperature transport in Mott-insulator/ band-insulator superlattices: optical conductivity and thermoelectricity
• Oxide tunnel junctions supporting a two-dimensional electron gas