Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott- and band insulators
arXiv:1406.0275 · doi:10.1103/PhysRevB.90.155118
Abstract
Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing free carriers at the interface. Here, we theoretically show that a metallic interface between a Mott- and a band-insulator can also form in the absence of a polar discontinuity. The condition for the appearance of such a metallic state is consistent with the classical Mott criterion: the metallic state is stable if the screening length falls below the effective Bohr radius of a particle-hole pair. In this case, the metallic state bears a remarkable similarity to the one found in polar/nonpolar heterostructures. On the other hand, if the screening length approaches the size of the effective Bohr radius, particles and holes are bound to each other resulting in an overall insulating phase. We analyze this metal-insulator transition, which is tunable by the dielectric constant, in the framework of the slave-boson mean-field theory for a lattice model with both onsite and long-range Coulomb interactions. We discuss ground-state properties and transport coefficients, which we derive in the relaxation-time approximation. Interestingly, we find that the metal-insulator transition is accompanied by a strong enhancement of the Seebeck coefficient in the band-insulator region in the vicinity of the interface. The implications of our theoretical findings for various experimental systems such as nonpolar (110) interfaces are also discussed.
13 pages, 14 figures
References in corpus (15)
- Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
- Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices
- Lattice polarization effects on electron-gas charge densities in ionic superlattices
- Optical Study of the Free Carrier Response of LaTiO3/SrTiO3 Superlattices
- The Mott insulator LaTiO_3 in heterostructures with SrTiO_3 is metallic
- Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity
- Modulation Doping near Mott-Insulator Heterojunctions
- Metallic interface at the boundary between band and Mott insulators
- Strongly renormalized quasi-two-dimensional electron gas in a heterostructure with correlation effects
- Embedding approach for dynamical mean field theory of strongly correlated heterostructures
- Electronic Interface Reconstruction at Polar-Nonpolar Mott Insulator Heterojunctions
- Aspects of metallic low-temperature transport in Mott-insulator/ band-insulator superlattices: optical conductivity and thermoelectricity
- Electronic and magnetic properties in strongly correlated heterostructures
- Field effect on surface states in a doped Mott-Insulator thin film
- Role of multiple subband renormalization in the electronic transport of correlated oxide superlattices