Strongly renormalized quasi-two-dimensional electron gas in a heterostructure with correlation effects

Abstract

We present aspects of strong electron correlation in a model of a BI/M/BI heterostructure where BI is a band insulator and M can be tuned from a metal to a Mott insulator by varying the on-site repulsion. An effective one-dimensional Schroedinger equation for the low-energy part is derived in the framework of the Kotliar-Ruckenstein slave-boson mean-field theory and solved self-consistently for a wide range of the on-site interaction strength and of the width of the sandwiched material M. In the strongly interacting limit coherent quasiparticles responsible for metallic behavior are confined to a relatively narrow region near the interfaces where they form a quasi-two-dimensional electron gas. Due to the lack of spatial homogeneity these quasiparticles intrinsically obtain a nontrivial dependence on the transverse momentum which for example enters the low-energy behavior of the optical conductivity.

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• Embedding approach for dynamical mean field theory of strongly correlated heterostructures
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• Anomalous mass enhancement in strongly-correlated quantum wells
• Aspects of metallic low-temperature transport in Mott-insulator/ band-insulator superlattices: optical conductivity and thermoelectricity
• Formation of orbital-selective electron states in LaTiO${}_3$/SrTiO${}_3$ superlattices
• Exact results with the Kotliar-Ruckenstein slave-boson representation
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• A comparative DMFT study of the eg-orbital Hubbard model in thin films
• Electrical field induced shift of the Mott Metal-Insulator transition in thin films
• Field effect on surface states in a doped Mott-Insulator thin film
• Slave-boson based configuration-interaction approach for the Hubbard model
• Oxide Heterostructures from a Realistic Many-Body Perspective
• Role of multiple subband renormalization in the electronic transport of correlated oxide superlattices