Field effect on surface states in a doped Mott-Insulator thin film

Abstract

Surface effects of a doped thin film made of a strongly correlated material are investigated both in the absence and presence of a perpendicular electric field. We use an inhomogeneous Gutzwiller approximation for a single band Hubbard model in order to describe correlation effects. For low doping, the bulk value of the quasiparticle weight is recovered exponentially deep into the slab, but with increasing doping, additional Friedel oscillations appear near the surface. We show that the inverse correlation length has a power-law dependence on the doping level. In the presence of an electrical field, considerable changes in the quasiparticle weight can be realized throughout the system. We observe a large difference (as large as five orders of magnitude) in the quasiparticle weight near the opposite sides of the slab. This effect can be significant in switching devices that use the surface states for transport.

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Cited by in corpus (2)

• An electric-field driven Mott metal-insulator transition in correlated thin films: an inhomogeneous dynamical mean-field theory approach
• Electrical permittivity driven metal-insulator transition in heterostructures of nonpolar Mott- and band insulators