A heterojunction modulation-doped Mott transistor

Abstract

A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material and produces transistor action by inducing an insulator-to-metal transition. Materials parameters from rare-earth nickelates and SrTiO3 are used to assess the potential of the "modulation-doped Mott FET" (ModMottFET or MMFET) as a next-generation switch. It is shown that the MMFET is characterized by unique "charge gain" characteristics as well as competitive transconductance, small signal gain and current drive.

The article has been accepted by Journal of Applied Physics. After it is published, it will be found at: http://jap.aip.org/

References in corpus (2)

• Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity
• Optical probe of electrostatic doping in an n-type Mott insulator

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• Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal
• Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen
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• Charge gain via solid-state gating of an oxide Mott system
• Terahertz-driven ultrafast dynamics of rare-earth nickelates by controlling only the charge degree of freedom