Probing the metal-insulator transition of NdNiO3 by electrostatic doping

Abstract

Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without introducing lattice distortions or disorder, as is the case for chemical doping. The approach is experimentally tested using ultrathin (2.5 nm) NdNiO3 films that are epitaxially grown on La-doped SrTiO3 films. We show that remote doping systematically changes the charge carrier density in the NdNiO3 film and causes a moderate shift in the metal-insulator transition temperature. These results are discussed in the context of theoretical models of this class of materials exhibiting a metal-insulator transition.

The article has been accepted by Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/

References in corpus (7)

• Landau theory of charge and spin ordering in the nickelates
• Fermi surfaces, electron-hole asymmetry and correlation kink in a three-dimensional Fermi liquid LaNiO${}_3$
• Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors
• A heterojunction modulation-doped Mott transistor
• Modulation Doping of a Mott Quantum Well by a Proximate Polar Discontinuity
• Modulation Doping near Mott-Insulator Heterojunctions
• Optical probe of electrostatic doping in an n-type Mott insulator

Cited by in corpus (4)

• Tuning bad metal and non-Fermi liquid behavior in a Mott material: rare earth nickelate thin films
• Correlated Electron Materials and Field Effect Transistors for Logic: A Review
• Striped nanoscale phase separation at the metal-insulator transition of heteroepitaxial nickelates
• Tailoring the electronic transitions of NdNiO_3 films through (111)_pc oriented interfaces