Correlated Electron Materials and Field Effect Transistors for Logic: A Review

Abstract

Correlated electron systems are among the centerpieces of modern condensed matter sciences, where many interesting physical phenomena, such as metal-insulator transition and high-Tc superconductivity appear. Recent efforts have been focused on electrostatic doping of such materials to probe the underlying physics without introducing disorder as well as to build field-effect transistors that may complement conventional semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) technology. This review focuses on metal-insulator transition mechanisms in correlated electron materials and three-terminal field effect devices utilizing such correlated oxides as the channel layer. We first describe how electron-disorder interaction, electron-phonon interaction and/or electron correlation in solids could modify the electronic properties of materials and lead to metal-insulator transitions. Then we analyze experimental efforts toward utilizing these transitions in field effect transistors and their underlying principles. It is pointed out that correlated electron systems show promise among these various materials displaying phase transitions for logic technologies. Furthermore, novel phenomena emerging from electronic correlation could enable new functionalities in field effect devices. We then briefly review unconventional electrostatic gating techniques, such as ionic liquid gating and ferroelectric gating, which enables ultra large carrier accumulation density in the correlated materials which could in turn lead to phase transitions. The review concludes with a brief discussion on the prospects and suggestions for future research directions in correlated oxide electronics for information processing.

60 pages, 12 figures. Accepted for publication in Critical Reviews in Solid State and Materials Sciences. This is author's preprint copy

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Cited by in corpus (19)

• Structural Semiconductor-to-Semimetal Phase Transition in Two-Dimensional Materials Induced by Electrostatic Gating
• First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
• Attosecond screening dynamics mediated by electron-localization
• Quantum-Matter Heterostructures
• GaN / VO2 heteroepitaxial p-n junctions: Band offset and minority carrier dynamics
• Energetics of the coupled electronic-structural transition in the rare-earth nickelates
• Charge tunable structural phase transitions in few-layer tellurium: a step toward building mono-elemental devices
• Effect of memory electrical switching in metal/vanadium oxide/silicon structures with VO2 films obtained by the sol-gel method
• Exact diagonalization solver for the extended dynamical mean-field theory
• Au-Gated SrTiO3 Field-Effect Transistors with Large Electron Concentration and Current Modulation
• Magnetism, transport, and thermodynamics in two-dimensional half-filled Hubbard superlattices
• Bandwidth Control and Symmetry Breaking in a Mott-Hubbard Correlated Metal
• Superconductivity and strong anharmonicity in novel Nb-S phases
• Search for power-efficient wide-range reversible resistance modulation of $V{O}_2$ single crystals
• Lithography-Free, Low-Cost Method for Improving Photodiode Performance by Etching Silicon Nanocones as Antireflection Layer
• Transmission Engineering as a route to Subthermal Switching
• Metal-Mott insulator interfaces
• Charge gain via solid-state gating of an oxide Mott system
• Suppression of the Mott insulating phase in the particle-hole asymmetric Hubbard model