Field-Effect Devices Utilizing LaAlO${}_3$-SrTiO${}_3$ Interfaces

Abstract

Using LaAlO${}_3$-SrTiO${}_3$ bilayers, we have fabricated field-effect devices that utilize the two-dimensional electron liquid generated at the bilayers' {\textit n}-type interfaces as drain-source channels and the LaAlO${}_3$ layers as gate dielectrics. With gate voltages well below 1\,V, the devices are characterized by voltage gain and current gain. The devices were operated at temperatures up to 100\,°C.

to be published in Applied Physics Letters

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