Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

Abstract

Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO${}_3$/SrTiO${}_3$ (LAO/STO) interface through ionic liquid-assisted electric field effect. By changing the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19380 cm${}^2$/Vs are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces which exhibit quantum phenomena could be obtained by ionic liquid-assisted field effect.

22 pages, 4 figures, ACS Nano, March 09, 2016

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Cited by in corpus (14)

• Physics of SrTiO${}_3$-based heterostructures and nanostructures: a review
• Antiferromagnetic Piezospintronics
• Giant tunability of the two-dimensional electron gas at the interface of gamma-Al2O3/SrTiO3
• Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces
• Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator
• Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels
• High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3
• The Mechanism of Electrolyte Gating on High-Tc Cuprates: The Role of Oxygen Migration and Electrostatics
• Electronic subbands in the a-LaAlO${}_3$/KTaO${}_3$ interface revealed by quantum oscillations in high magnetic fields
• Universality of Electron Mobility in LaAlO${}_3$/SrTiO${}_3$ and bulk SrTiO${}_3$
• Ionic modulation at the LaAlO${}_3$/KTaO${}_3$ interface for extreme high-mobility two-dimensional electron gas
• High stability 2D electron gases formed in Si3N4/Al//KTaO3 heterostructures: synthesis and in-depth interfacial characterization
• Two-Dimensional Charge Localization at the Perovskite Oxide Interface
• Graphene-Complex-oxide Nanoscale Device Concepts