Fractionally delta-doped oxide superlattices for higher carrier mobilities
arXiv:1209.0721 · doi:10.1021/nl301844z
Abstract
A 2D electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional delta-doping to control the interface's composition in LaxSr1-xTiO3/SrTiO3 artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.
arXiv comment14 pages, 4 figures, Nano Letters published online (2012)
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Cited by in corpus (10)
- Quasiparticle dynamics and spin-orbital texture of the SrTiO3 two-dimensional electron gas
- Emerging magnetism and anomalous Hall effect in iridate-manganite heterostructures
- Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface
- Resonant tunneling in a quantum oxide superlattice
- Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures
- Thermopower enhancement by fractional layer control in 2D oxide superlattices
- Correlated Quantum Phenomena of Spin-Orbit Coupled Perovskite Oxide Heterostructures: Cases of SrRuO3 and SrIrO3-Based Artificial Superlattices
- Towards Mott design by -doping of strongly correlated titanates
- Electron gas induced in SrTiO
- Ex-situ atomic force microscopy on the growth mode of SrRuO3 epitaxial thin film