Fractionally delta-doped oxide superlattices for higher carrier mobilities

Abstract

A 2D electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional delta-doping to control the interface's composition in LaxSr1-xTiO3/SrTiO3 artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.

14 pages, 4 figures, Nano Letters published online (2012)

References in corpus (3)

• Growth mode control of the free carrier density in SrTiO3-d films
• Optical Study of the Free Carrier Response of LaTiO3/SrTiO3 Superlattices
• Metallic interface at the boundary between band and Mott insulators

Cited by in corpus (7)

• Emerging magnetism and anomalous Hall effect in iridate-manganite heterostructures
• Resonant tunneling in a quantum oxide superlattice
• Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures
• Thermopower enhancement by fractional layer control in 2D oxide superlattices
• Correlated Quantum Phenomena of Spin-Orbit Coupled Perovskite Oxide Heterostructures: Cases of SrRuO3 and SrIrO3-Based Artificial Superlattices
• Towards Mott design by $\delta$-doping of strongly correlated titanates
• Ex-situ atomic force microscopy on the growth mode of SrRuO3 epitaxial thin film