Resonant tunneling in a quantum oxide superlattice
arXiv:1506.07583 · doi:10.1038/ncomms8424
Abstract
Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunnelling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunnelling behaviour with a clear negative differential resistance. The tunnelling occurred through an atomically thin, lanthanum δ-doped SrTiO3 layer, and the negative differential resistance was realized on top of the bipolar resistance switching typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~10^5) between the high and low-resistance states. The unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.
arXiv comment24 pages including 4 figures and supplementary information
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Cited by in corpus (6)
- Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum
- Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale
- Phase Instability amid Dimensional Crossover in Artificial Oxide Crystal
- Correlated Quantum Phenomena of Spin-Orbit Coupled Perovskite Oxide Heterostructures: Cases of SrRuO3 and SrIrO3-Based Artificial Superlattices
- Locking of magnetization and Josephson oscillations at ferromagnetic resonance in junction under external radiation
- Orientation-dependent ferroelectricity of strained PbTiO films