Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale

Abstract

Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but viability of device fabrication requires fuller understanding of electron dynamics than has been possible to date. Using an all-electronic time-resolved scanning tunneling microscopy technique and a Green's function transport model, we study an isolated dangling bond on a hydrogen terminated silicon surface. A robust negative differential resistance feature is identified as a many body phenomenon related to occupation dependent electron capture by a single atomic level. We measure all the time constants involved in this process and present atomically resolved, nanosecond timescale images to simultaneously capture the spatial and temporal variation of the observed feature.

References in corpus (7)

• Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
• Negative Differential Resistance in the Scanning Tunneling Spectroscopy of Organic molecules
• Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface
• Resonant tunneling in a quantum oxide superlattice
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• Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition
• Versatile scanning tunneling microscopy with 120ps time resolution

Cited by in corpus (15)

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• Design of Atomically Precise Nanoscale Negative Differential Resistance Devices
• Optimizing surface defects for atomic-scale electronics: Si dangling bonds
• Probing molecular excited states by atomic force microscopy
• Magnetic-field-controlled negative differential conductance in graphene npn junction resonators
• Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State
• Spectroscopic signature of obstructed surface states in SrIn${}_2$P${}_2$
• Ionic Charge Distributions in Silicon Atomic Wires
• Dangling bonds on the Cl- and Br-terminated Si(100) surfaces
• Gigahertz frame rate imaging of charge-injection dynamics in a molecular light source
• Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length
• Transitions between positive and negative charge states of dangling bonds on a halogenated Si(100) surface