Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length
arXiv:2411.10625 · doi:10.1088/1361-6528/adafae
Abstract
Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band gap. We studied bare silicon dimers as monomeric units. Silicon dimer wires are much more stable than wires composed of individual dangling bonds. Dimer wires composed of 1 to 5 dimers were intentionally fabricated and characterised by STM techniques combined with density functional theory to provide detailed insights into geometric and electronic structure. Structural and dynamic qualities displayed by short wires were shown to be similar to the characteristics of a relatively long 37 dimer wire. Rather than adding two states into the band gap, experiment and theory reveal that each dimer adds one empty state into the gap and one filled state into the valence bands. Coupling among these states provides a conduction pathway with small bulk coupling.
14 pages, 5 figures
References in corpus (7)
- Binary Atomic Silicon Logic
- Atomic White-Out: Enabling Atomic Circuitry Through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface
- Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface
- Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale
- Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage
- Origin of Symmetric Dimer Images of Si(001) Observed in Low-Temperature STM
- Ionic Charge Distributions in Silicon Atomic Wires