126 citations · 606 across the 18 of their papers we have counts for
18 papers
Engineering Quantum Wire States for Atom Scale Circuitry
Max Yuan, Lucian Livadaru, Roshan Achal +3
Recent advances in hydrogen lithography on silicon surfaces now enable the fabrication of complex and error-free atom-scale circuitry. The structure of atomic wires, the most basic…
Structural Control of Atomic Silicon Wires
Furkan M. Altincicek, Christopher C. Leon, Lucian Livadaru +5
Bare Si(100)-21 surface atoms exhibit a buckled structure where one Si atom in a dimer is lowered while the other is raised, leading to two possible buckling configurations…
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…
Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length
Furkan M. Altincicek, Lucian Livadaru, Christopher C. Leon +6
Bare silicon dimers on hydrogen-terminated Si(100) have two dangling bonds. These are atomically localized regions of high state density near to and within the bulk silicon band ga…
Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot
Taleana Huff, Thomas Dienel, Mohammad Rashidi +4
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here,…
SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits
Samuel Ng, Jacob Retallick, Hsi Nien Chiu +7
This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of atomic silicon dangling bond quantum dot patterns capable of computational log…
Initiating and monitoring the evolution of single electrons within atom-defined structures
Mohammad Rashidi, Wyatt Vine, Thomas Dienel +5
Using a non-contact atomic force microscope we track and manipulate the position of single electrons confined to atomic structures engineered from silicon dangling bonds (DBs) on t…
Binary Atomic Silicon Logic
Taleana Huff, Hatem Labidi, Mohammad Rashidi +5
It has long been anticipated that the ultimate in miniature circuitry will be crafted of single atoms. Despite many advances made in scanned probe microscopy studies of molecules a…
Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition
Hatem Labidi, Marco Taucer, Mohammad Rashidi +6
We report the study of single dangling bonds (DB) on the hydrogen terminated silicon (100) surface using a low temperature scanning tunneling microscope (LT-STM). By investigating…
Silicon Atomic Quantum Dots Enable Beyond-CMOS Electronics
Robert A. Wolkow, Lucian Livadaru, Jason Pitters +5
We review our recent efforts in building atom-scale quantum-dot cellular automata circuits on a silicon surface. Our building block consists of silicon dangling bond on a H-Si(001)…
Conductivity of Si(111) - 7 x 7: the role of a single atomic step
Bruno V. C. Martins, Manuel Smeu, Hong Guo +1
The Si(111) - 7 x 7 surface is one of the most interesting semiconductor surfaces because of its complex reconstruction and fascinating electronic properties. While it is known tha…
Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon
Zahra Shaterzadeh-Yazdi, Lucian Livadaru, Marco Taucer +4
We devise a scheme to characterize tunneling of an excess electron shared by a pair of tunnel-coupled dangling bonds on a silicon surface -- effectively a two-level system. Theoret…
Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface
Marco Taucer, Lucian Livadaru, Paul G. Piva +4
Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is…
Nanoscale structuring of tungsten tip yields most coherent electron point-source
Josh Y. Mutus, Lucian Livadaru, Radovan Urban +3
This report demonstrates the most spatially-coherent electron source ever reported. A coherence angle of 14.3 +/- 0.5 degrees was measured, indicating a virtual source size of 1.7…
Theory of Non-equilibrium Single Electron Dynamics in STM Imaging of Dangling Bonds on a Hydrogenated Silicon Surface
Lucian Livadaru, Jason Pitters, Marco Taucer +1
During fabrication and scanning-tunneling-microscope (STM) imaging of dangling bonds (DBs) on a hydrogenated silicon surface, we consistently observed halo-like features around iso…
Limits of Elemental Contrast by Low Energy Electron Point Source Holography
Lucian Livadaru, Josh Mutus, Robert A. Wolkow
Motivated by the need for less destructive imaging of nanostructures, we pursue point-source in-line holography (also known as point projection microscopy, or PPM) with very low en…
Dangling-bond charge qubit on a silicon surface
Lucian Livadaru, Peng Xue, Zahra Shaterzadeh-Yazdi +5
Two closely spaced dangling bonds positioned on a silicon surface and sharing an excess electron are revealed to be a strong candidate for a charge qubit. Based on our study of the…
Controlled Coupling and Occupation of Silicon Atomic Quantum Dots
M. Baseer Haider, Jason L Pitters, Gino A. DiLabio +3
It is discovered that the zero-dimensional character of the silicon atom dangling bond (DB) state allows controlled formation and occupation of a new form of quantum dot assemblies…