Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface

Abstract

Here we report the direct observation of single electron charging of a single atomic Dangling Bond (DB) on the H-Si(100) 2x1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single electron sensitive charge-detector. Three distinct charge states of the dangling bond, positive, neutral, and negative, are discerned. Charge state probabilities are extracted from the data, and analysis of current traces reveals the characteristic single electron charging dynamics. Filling rates are found to decay exponentially with increasing tip-DB separation, but are not a function of sample bias, while emptying rates show a very weak dependence on tip position, but a strong dependence on sample bias, consistent with the notion of an atomic quantum dot tunnel coupled to the tip on one side and the bulk silicon on the other.

7 pages, 6 figures

References in corpus (7)

• Electrical resistance: an atomistic view
• Optical addressing of an individual erbium ion in silicon
• Bipolar spin blockade and coherent state superpositions in a triple quantum dot
• Single-electron quantum dot in Si/SiGe with integrated charge-sensing
• Coherent Adiabatic Spin Control in the Presence of Charge Noise Using Tailored Pulses
• Energetics and stability of dangling-bond silicon wires on H passivated Si(100)
• Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon

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• Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition
• Initiating and monitoring the evolution of single electrons within atom-defined structures
• Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot
• Time-Resolved Imaging of Negative Differential Resistance on the Atomic Scale
• Optimizing surface defects for atomic-scale electronics: Si dangling bonds
• Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM
• Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage
• Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State
• Chlorine insertion and manipulation on the Si(100)-2x1-Cl surface in the regime of local supersaturation
• Scanned single-electron probe inside a silicon electronic device
• Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length
• Transitions between positive and negative charge states of dangling bonds on a halogenated Si(100) surface