Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM

Abstract

The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a promising platform for the development of atom scale devices, with recent work showing their creation through precise desorption of surface hydrogen atoms. While samples with relatively large areas of the hydrogen terminated 2x1 surface are routinely created using an in-situ methodology, surface defects are inevitably formed as well reducing the area available for patterning. Here, we present a catalog of several commonly found defects of the H-Si(100)-2x1 surface. By using a combination of scanning tunneling microscopy (STM) and non-contact atomic force microscopy (nc-AFM), we are able to extract useful information regarding the atomic and electronic structure of these defects. This allowed for the confirmation of literature assignments of several commonly found defects, as well as proposed classification of previously unreported and unassigned defects. By better understanding the structure and origin of these defects, we make the first steps toward enabling the creation of superior surfaces ultimately leading to more consistent and reliable fabrication of atom scale devices.

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• Deep Learning-Guided Surface Characterization for Autonomous Hydrogen Lithography
• Ionic Charge Distributions in Silicon Atomic Wires
• Hydrogen inserted into the Si(100)-2x1-H surface: A first-principles study
• Multiple Silicon Dangling-Bond Charge qubits for quantum computing: A Hilbert-Space Analysis of the Hamiltonian