Multiple Silicon Dangling-Bond Charge qubits for quantum computing: A Hilbert-Space Analysis of the Hamiltonian
arXiv:2304.00283 · doi:10.1088/1402-4896/ace0e2
Abstract
Silicon-based dangling-bond charge qubit is one of the auspicious models for universal fault-tolerant solid-state quantum computing. In universal quantum computing, it is crucial to evaluate and characterize the computational Hilbert space and reduce the complexity and size of the computational space. Here, we recognize this problem to understand the complexity and characteristics of the Hilbert space in our dangling-bond qubit model. The size of the desired Hilbert space can prominently be reduced by considering assumptions regarding the qubit loss. Moreover, the dimension of the desired subsets in the space shrinks by a factor of two due to the spin preservation property. Finally, the required classical memory for storage of the qubit information, Hamiltonian and Hilbert space is analysed when the number of qubits grows.
arXiv comment8 pages, 5 figures, 2 tables
References in corpus (15)
- Quantum Computation with Quantum Dots
- Quantum Mechanics helps in searching for a needle in a haystack
- Coherent control of macroscopic quantum states in a single-Cooper-pair box
- Single-shot read-out of an individual electron spin in a quantum dot
- Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
- Coherent manipulation of electronic states in a double quantum dot
- Approaching Unit Visibility for Control of a Superconducting Qubit with Dispersive Readout
- Charge-qubit operation of an isolated double quantum dot
- Binary Atomic Silicon Logic
- Measuring the decoherence rate in a semiconductor charge qubit
- Atomic White-Out: Enabling Atomic Circuitry Through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface
- Dangling-bond charge qubit on a silicon surface
- Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM
- Characterizing the rate and coherence of single-electron tunneling between two dangling bonds on the surface of silicon
- Ionic Charge Distributions in Silicon Atomic Wires