Binary Atomic Silicon Logic
arXiv:1706.07427 · doi:10.1038/s41928-018-0180-3
Abstract
It has long been anticipated that the ultimate in miniature circuitry will be crafted of single atoms. Despite many advances made in scanned probe microscopy studies of molecules and atoms on surfaces, challenges with patterning and limited thermal stability have remained. Here we make progress toward those challenges and demonstrate rudimentary circuit elements through the patterning of dangling bonds on a hydrogen terminated silicon surface. Dangling bonds sequester electrons both spatially and energetically in the bulk band gap, circumventing short circuiting by the substrate. We deploy paired dangling bonds occupied by one movable electron to form a binary electronic building block. Inspired by earlier quantum dot-based approaches, binary information is encoded in the electron position allowing demonstration of a binary wire and an OR gate.
References in corpus (16)
- Quantum control and process tomography of a semiconductor quantum dot hybrid qubit
- Fast sensing of double-dot charge arrangement and spin state with an rf sensor quantum dot
- Detection of Single Electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic Force Microscopy
- Scanning Quantum Dot Microscopy
- Atomic White-Out: Enabling Atomic Circuitry Through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface
- SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits
- Dangling-bond charge qubit on a silicon surface
- Single Electron Dynamics of an Atomic Silicon Quantum Dot on the H-Si(100) 2x1 Surface
- Time-Resolved Single Dopant Charge Dynamics in Silicon
- Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition
- Initiating and monitoring the evolution of single electrons within atom-defined structures
- Theory of Non-equilibrium Single Electron Dynamics in STM Imaging of Dangling Bonds on a Hydrogenated Silicon Surface
- Optimizing surface defects for atomic-scale electronics: Si dangling bonds
- Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State
- New fabrication technique for highly sensitive qPlus sensor with well-defined spring constant
- Search for a Metallic Dangling-Bond Wire on -doped H-passivated Semiconductor Surfaces
Cited by in corpus (20)
- SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits
- Precise atom manipulation through deep reinforcement learning
- Atomic-scale manipulation and in situ characterization with scanning tunneling microscopy
- Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot
- Engineered electronic states in atomically precise artificial lattices and graphene nanoribbons
- Deep Learning-Guided Surface Characterization for Autonomous Hydrogen Lithography
- Embedding Human Heuristics in Machine-Learning-Enabled Probe Microscopy
- Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM
- Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage
- Roadmap on Atomic-scale Semiconductor Devices
- Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State
- Limits of Adiabatic Clocking in Quantum-dot Cellular Automata
- Ionic Charge Distributions in Silicon Atomic Wires
- Scanned single-electron probe inside a silicon electronic device
- Hydrogen inserted into the Si(100)-2x1-H surface: A first-principles study
- Electronic Structures of Atomic Silicon Dimer Wires as a Function of Length
- Vacancy diffusion on a brominated Si(100) surface: Critical effect of the dangling bond charge state
- Structural Control of Atomic Silicon Wires
- Transitions between positive and negative charge states of dangling bonds on a halogenated Si(100) surface
- Multiple Silicon Dangling-Bond Charge qubits for quantum computing: A Hilbert-Space Analysis of the Hamiltonian