79 citations · 110 across the 3 of their papers we have counts for
7 papers
Ionic Charge Distributions in Silicon Atomic Wires
Jeremiah Croshaw, Taleana Huff, Mohamad Rashidi +4
Using a non-contact atomic force microscope (nc-AFM), we examine continuous DB wire structures on the hydrogen-terminated silicon (100) 2x1 surface. By probing the DB structures at…
Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM
Jeremiah Croshaw, Thomas Dienel, Taleana Huff +1
The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a promising platform for the development of atom scale devices, with recent work showing their creation th…
Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage
Roshan Achal, Mohammad Rashidi, Jeremiah Croshaw +2
Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum…
Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot
Taleana Huff, Thomas Dienel, Mohammad Rashidi +4
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here,…
SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits
Samuel Ng, Jacob Retallick, Hsi Nien Chiu +7
This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of atomic silicon dangling bond quantum dot patterns capable of computational log…
Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State
Mohammad Rashidi, Erika Lloyd, Taleana R. Huff +4
We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electron…