Initiating and monitoring the evolution of single electrons within atom-defined structures

Abstract

Using a non-contact atomic force microscope we track and manipulate the position of single electrons confined to atomic structures engineered from silicon dangling bonds (DBs) on the hydrogen terminated silicon surface. By varying the probe-sample separation we mechanically manipulate the equilibrium position of individual surface silicon atoms and use this to directly switch the charge state of individual DBs. Because this mechanism is based on short range interactions and can be performed without applied bias voltage, we maintain both site-specific selectivity and single-electron control. We extract the short range forces involved with this mechanism by subtracting the long range forces acquired on a dimer vacancy site. As a result of relaxation of the silicon lattice to accommodate negatively charged DBs we observe charge configurations of DB structures that remain stable for many seconds at 4.5 K. Subsequently we use charge manipulation to directly prepare the ground state and metastable charge configurations of DB structures composed of up to six atoms.

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• Roadmap on Atomic-scale Semiconductor Devices
• Experimental quantum phase discrimination enhanced by controllable indistinguishability-based coherence
• Experimental demonstration of pitfalls and remedies for precise force deconvolution in frequency-modulation atomic force microscopy
• Ionic Charge Distributions in Silicon Atomic Wires
• Hydrogen inserted into the Si(100)-2x1-H surface: A first-principles study