3 papers
cond-mat.mtrl-sci2020
Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM
Jeremiah Croshaw, Thomas Dienel, Taleana Huff +1
The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a promising platform for the development of atom scale devices, with recent work showing their creation th…
cond-mat.mtrl-sci2019
Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot
Taleana Huff, Thomas Dienel, Mohammad Rashidi +4
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here,…
cond-mat.mes-hall2018
SiQAD: A Design and Simulation Tool for Atomic Silicon Quantum Dot Circuits
Samuel Ng, Jacob Retallick, Hsi Nien Chiu +7
This paper introduces SiQAD, a computer-aided design tool enabling the rapid design and simulation of atomic silicon dangling bond quantum dot patterns capable of computational log…