19 citations · 19 across the 1 of their papers we have counts for
5 papers
Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM
Jeremiah Croshaw, Thomas Dienel, Taleana Huff +1
The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a promising platform for the development of atom scale devices, with recent work showing their creation th…
Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage
Roshan Achal, Mohammad Rashidi, Jeremiah Croshaw +2
Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum…
Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot
Taleana Huff, Thomas Dienel, Mohammad Rashidi +4
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here,…
Deep Learning-Guided Surface Characterization for Autonomous Hydrogen Lithography
Mohammad Rashidi, Jeremiah Croshaw, Kieran Mastel +3
As the development of atom scale devices transitions from novel, proof-of-concept demonstrations to state-of-the-art commercial applications, automated assembly of such devices mus…
Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State
Mohammad Rashidi, Erika Lloyd, Taleana R. Huff +4
We report on tuning the carrier capture events at a single dangling bond (DB) midgap state by varying the substrate temperature, doping type, and doping concentration. All-electron…