activity
20172020
most citedResolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State

19 citations · 31 across the 2 of their papers we have counts for

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cond-mat.mtrl-sci202012 cited

Ionic Charge Distributions in Silicon Atomic Wires

Jeremiah Croshaw, Taleana Huff, Mohamad Rashidi +4

Using a non-contact atomic force microscope (nc-AFM), we examine continuous DB wire structures on the hydrogen-terminated silicon (100) 2x1 surface. By probing the DB structures at…

cond-mat.mtrl-sci2020

Atomic defects of the hydrogen-terminated Silicon(100)-2x1 surface imaged with STM and nc-AFM

Jeremiah Croshaw, Thomas Dienel, Taleana Huff +1

The hydrogen-terminated Silicon(100)-2x1 surface (H-Si(100)-2x1) provides a promising platform for the development of atom scale devices, with recent work showing their creation th…

cond-mat.mtrl-sci2019

Detecting and Directing Single Molecule Binding Events on H-Si(100) with Application to Ultra-dense Data Storage

Roshan Achal, Mohammad Rashidi, Jeremiah Croshaw +2

Many new material systems are being explored to enable smaller, more capable and energy efficient devices. These bottom up approaches for atomic and molecular electronics, quantum…

cond-mat.mtrl-sci2019

Electrostatic Landscape of a H-Silicon Surface Probed by a Moveable Quantum Dot

Taleana Huff, Thomas Dienel, Mohammad Rashidi +4

With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here,…

cond-mat.mtrl-sci2019

Deep Learning-Guided Surface Characterization for Autonomous Hydrogen Lithography

Mohammad Rashidi, Jeremiah Croshaw, Kieran Mastel +3

As the development of atom scale devices transitions from novel, proof-of-concept demonstrations to state-of-the-art commercial applications, automated assembly of such devices mus…